High photo-excited carrier multiplication by charged InAs dots in AlAs/GaAs/AlAs resonant tunneling diode

摘要

We present an approach for the highly sensitive photon detection based on thequantum dots (QDs) operating at temperature of 77K. The detection structure isbased on an AlAs/GaAs/AlAs double barrier resonant tunneling diode combinedwith a layer of self-assembled InAs QDs (QD-RTD). A photon rate of 115 photonsper second had induced 10nA photocurrent in this structure, corresponding tothe photo-excited carrier multiplication factor of 10^7. This highmultiplication factor is achieved by the quantum dot induced memory effect andthe resonant tunneling tuning effect of QD-RTD structure.